Descripción
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
Publication Date : Jul．2017
2
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V -5 to +10 V
Pch Channel dissipation Tc=25°C 56.8 W
Pin Input power Zg=Zl=50 0.8 W
ID Drain to source current – 5 A
Tch Channel temperature – 150 °C
Tstg Storage temperature – -40 to +150 °C
Rth j-c Thermal resistance junction to case 2.2 °C/W
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